在简单回顾了标准I~2L门开关速度的限制因素之后,计算了某些特殊的高速I~2L门的缚输延迟时间。对于采用氧化物隔离、薄处延层来实现的门,延迟时间直接依赖于注入器的基区宽度。一般说来,n—p—n开关晶体管对延迟时间几乎没有贡献。如果改进I~2L门使其注入器不饱和,则延迟时间主要取决于开关晶体管增益为1时的频率。但是,由于这个晶体管的深度饱和,已经获得的τ_d的数值表明,速度的改善不到一个数量级。 After briefly reviewing the limitations of the standard I ~ 2L door switching speed, the delay time of some special high speed I ~ 2L gates was calculated. For gates implemented with oxide isolation, thinner layers, the delay time is directly dependent on the width of the injector base. In general, n-p-n switching transistors have almost no contribution to the delay time. If the I ~ 2L gate is modified to make its injector unsaturated, the delay depends mainly on the frequency at which the switching transistor gains a gain of one. However, due to the deep saturation of this transistor, the value of τ_d that has been obtained shows that the speed improvement is less than one order of magnitude.