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利用SEM和慢正电子束分析(SPBA)方法研究了不同注量的多能氦离子注入和注氦后不同温度退火的多晶W中He相关缺陷的演化机制。结果表明,W材料中由多能氦离子注入引入的空位型缺陷数目随着He+注量的升高而增大;220℃退火引起注氦W样品中的间隙W原子与空位的复合,降低了材料中的空位型缺陷数目;450℃和650℃退火的注氦W材料中形成了He泡,He泡尺寸与退火温度有关,650℃退火的样品中观测到直径达600 nm的大尺寸He泡和孔洞结构。
SEM and slow positron-electron beam analysis (SPBA) were used to investigate the evolution mechanism of He-related defects in polycrystalline W with different fluence and implantation of helium at different temperatures. The results show that the number of vacancy defects introduced by multi-energy helium ion implantation in W material increases with the increase of He + fluence. The annealing at 220 ℃ causes the recombination of W atoms and vacancies in the helium-filled W sample, The number of vacancy defects in the material; He bubble was formed in the helium-W material annealed at 450 ℃ and 650 ℃, the size of He bubble was related to the annealing temperature, the large size He bubble of 600 nm in diameter was observed in the sample annealed at 650 ℃ And hole structure.