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用高阻硅制作的光学元件是太赫兹系统里常用的器件,但是其高达3.42的相对折射率所引起的阻抗失配严重影响了太赫兹系统的功率,因此研究人员尝试了各种各样的方式在高阻硅表面镀上有效的增透膜.在太赫兹波段,缺乏合适的材料是增透研究中亟需解决的一个重要问题.介绍一种结构新颖的硅材料增透器件—三维光子倒置光栅.与普通高阻硅片相比,当结构周期为15μm时,该器件在0.2—7.3 THz范围内对太赫兹波具有明显的增透作用,且覆盖了大部分太赫兹波段.此外,该器件的使用不受太赫兹偏振方向限制,适用于大入射角情形,并具有高达116.3%的相对3 dB带宽.
The optics made of high-resistivity silicon are commonly used in terahertz systems, but the impedance mismatch caused by their relative refractive indices of up to 3.42 severely affects the power of the terahertz system, so researchers have tried a variety of Way on the high-resistance silicon surface coated with an effective anti-reflection film.In the terahertz band, the lack of appropriate materials is an important issue in the study of antireflection.In this paper, a new structure of the silicon material antireflection device - three-dimensional photon Inverted grating.Compared with common high-resistance silicon, the device has a significant enhancement of terahertz wave propagation in the range of 0.2-7.3 THz and covers most of the terahertz waveband when the structure period is 15μm.In addition, The device is not used for terahertz polarization and is suitable for large incident angles and has a relative 3 dB bandwidth of up to 116.3%.