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用MEVVA离子源将La离子注入到单晶硅中形成掺杂层 ,用XRD ,SEM分析了掺杂层的物相和表面形貌 .分析结果表明 ,在强流离子注入后 ,掺杂层中有硅化物形成 ,且形成相的种类与注量、束流密度及后续热处理条件密切相关 .对La硅化物的形成过程进行了讨论 .
La was ion-implanted into monocrystalline silicon by MEVVA ion source to form a doped layer, and the phase and surface morphology of the doped layer were analyzed by XRD and SEM.The analysis results showed that after the implantation of La There are silicide formation, and the type of phase formed is closely related to the fluence, beam current density and subsequent heat treatment conditions. The formation of La silicide is discussed.