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作者在MBE法和LPE法生长的GaAlAs/GaAs外延片中观察到了多层膜的X射线干涉条纹.用X射线双晶测角仪记录了这种干涉条纹,并从条纹振荡的周期计算出外延片中相应外延层的厚度.在实验样品具有一定曲率半径(在本实验条件下10—30米)的情况下,用X射线双晶形貌法摄取了这种干涉条纹相,并对弯曲外延片的成相几何进行了分析;通过测量貌相图上干涉条纹的振荡周期,计算出了外延片的曲率半径.
The authors observed the X-ray interference fringes of multilayers in GaAlAs / GaAs epitaxial wafers grown by the MBE method and the LPE method. The interference fringes were recorded using an X-ray double crystal goniometer and the extension was calculated from the period of the fringe oscillation The thickness of the corresponding epitaxial layer in the film In the experimental sample has a radius of curvature (in the experimental conditions of 10-30 meters), the use of X-ray dual-crystal topography of this interference fringe phase, and bending extension The phase geometry of the wafer was analyzed. The radius of curvature of the wafer was calculated by measuring the oscillation period of interference fringes on the topography.