本文提出一种用于科学地评价双极型半导体器件(npn或pnp晶体管)工艺水平的微电子测试图形。该测试图形由物理分析及工艺参数测试结构、器件参数测试结构等部分组成,测试结构的探脚采用阵列式引出,适合2×N探卡进行探测。多数测试结构能用我们研制的微电子测试图形参数自动测试仪进行及数据处理。文中还给出利用本测试图形对工厂生产线工艺水平进行评估的实例。 This paper presents a microelectronic test pattern for scientifically evaluating the process level of bipolar semiconductor devices (npn or pnp transistors). The test pattern is composed of physical analysis and process parameter test structure, device parameter test structure and other parts. The test structure leads are arrayed and suitable for 2 × N probe card. Most of the test structure can be used to develop our microelectronic test pattern parameters automatic test instrument and data processing. The article also gives an example of using the test pattern to evaluate the craft level of the factory production line.