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本文给出了预试环装置中等离子体与器壁相互作用的结果。分析了孔栏受电子轰击与离子轰击的不同特点和金属材料迁移现象。指出,逃逸电子是造成孔栏损伤的主要因素,而真空室内壁的损伤主要是由微观放电(单极电弧)所引起的。
This paper presents the results of the interaction between the plasma and the wall in the pre-test ring device. The different characteristics of the hole column affected by electron bombardment and ion bombardment and the phenomenon of metal material migration were analyzed. It is pointed out that escaping electrons is the main factor causing the damage of the hole column, and the damage of the inner wall of the vacuum chamber is mainly caused by the micro discharge (unipolar arc).