在有与没有Ar+同时轰击的条件下，研究了GaAs中Ga+2次离子发射的氧效应。对吸附在表面上的氧以及反弹注入到表面内的氧引起的Ga+二次离子产额增强效应进行了实验研究，同时测量了氧分压强对Ga+二次离子能量分布的影响。实验结果表明：注氧后Ga+二次离子能量分布变窄且最可见能量向低能端移动2～3eV，说明氧对低能Ga+二次离子的增强作用更强，这可以用断键模型来解释。 The oxygen effect of Ga + 2ions emission in GaAs was investigated with and without bombardment of Ar +. The effects of oxygen adsorbed on the surface and the oxygen-induced enhancement of Ga + secondary ion yield were studied experimentally. The effect of oxygen partial pressure on the energy distribution of Ga + secondary ions was also measured. The experimental results show that the energy distribution of Ga + secondary ions becomes narrower and the most visible energy shifts to 2 ~ 3eV toward the low energy side after oxygen injection, which shows that the enhanced effect of oxygen on low-energy Ga + secondary ions is stronger. This can be explained by the broken-bond model.