论文部分内容阅读
实验测量和理论结果均表明,随着MOS器件尺寸缩小到纳米尺度,其过剩噪声的主要成分将从以热噪声为主转变为以散粒噪声为主,且散粒噪声受费米抑制作用和库仑抑制作用.而目前对纳米MOSFET散粒噪声抑制的研究时,采取了完全不考虑其抑制,或者只是强调抑制的存在而并未给出具体的抑制分析.本文将采用蒙特卡罗(Monte Carlo)模拟方法对实际纳米MOSFET电流噪声进行数值模拟研究,并考虑费米作用和库仑作用对散粒噪声的抑制影响,分别得到费米抑制因子和费米与库仑共同作用时的抑制因子.在此基础上,重点考察栅极电压、源漏电压、温度和掺杂浓度对散粒噪声抑制的影响及其关系的理论分析,得到的模拟结果与文献给出的实验结果和介观理论结果相吻合.
Experimental measurements and theoretical results show that as the size of MOS devices shrinks to the nanometer scale, the main component of excess noise changes from thermal noise to shot noise, and shot noise is suppressed by Fermi Coulomb inhibition.At present, no specific inhibition analysis has been given for the study of inhibiting the shot noise of nano-MOSFETs without regard to its inhibition or simply by emphasizing suppression.In this paper, Monte Carlo ) Simulation method to simulate the current noise of nanometer MOSFET and to consider the influence of Fermi action and coulomb effect on the shot noise. The Fermi suppression factor and the inhibition factor of Fermi interaction with Coulomb are obtained respectively. Based on the theoretical analysis of the effects of gate voltage, source and drain voltage, temperature and doping concentration on shot noise suppression and the theoretical analysis, the simulation results are in good agreement with the experimental and mesoscopic theoretical results .