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Memory effect has been studied in the system using magnetic nanoparticles with Ni nanocore encapsulated by non-magnetic and oxidation-resistant Ni2P nanoshell acquired through surface-phosphatizing Ni nanoparticles. The self-assembled array with interparticle spacing of about 6 nm shows memory effect up to 200 K below its average blocking temperature of 260 K. And reducing the interparticle spacing of the self-assembled array via annealing can further enlarge the temperature range of memory effect up to room-temperature. The memory effect can be understood based on the thermal relaxation theory of single-domain magnetic nanoparticles. Furthermore, the read-write magnetic coding is realized based on the temperature changes, using the memory effect up to room-temperature, which may be useful for future memory devices.
Memory effect has been studied in the system using magnetic nanoparticles with Ni nanocore encapsulated by non-magnetic and oxidation-resistant Ni2P nanoshell acquired through surface-phosphatizing Ni nanoparticles. The self-assembled array with interparticle spacing of about 6 nm shows memory effect up to 200 K below its average blocking temperature of 260 K. And reducing the interparticle spacing of the self-assembled array via annealing can further enlarge the temperature range of memory effect up to room-temperature. The memory effect can be based based on the thermal relaxation theory of single-domain magnetic nanoparticles. Furthermore, the read-write magnetic coding is realized based on the temperature changes, using the memory effect up to room-temperature, which may be useful for future memory devices.