一、引言: 随着硅集成电路的迅速成发展,以及对器件的可靠性,移定性要求越来越高,人们普遍地认识到二氧化硅（SiO_2）虽然制备简单,但它毕竟不是完美的理想介质,因其在结构上多孔,介电常数低（ε=3.9）,对水具有强为来合力以及水和其他气体具有高的渗透性,特别是阻挡Na(+)离子渗入能力差,以致造成了器件不稳定性,从而发展氮化硅（Si_3N_4）工艺以补SiO_2介质的缺陷。 I. INTRODUCTION With the rapid development of silicon integrated circuits and the increasing reliability and reliability of the devices, it is generally recognized that although SiO 2 is not easy to prepare, it is not perfect after all The ideal medium, due to its porous structure, low dielectric constant (ε = 3.9), strong coalescence of water and high permeability of water and other gases, especially the poor penetration of Na (+) ions, As a result, device instability is caused, so the silicon nitride (Si_3N_4) process is developed to make up defects of the SiO_2 medium.