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用热蒸发法和热处理制备稀土Dy掺杂金属氧化物CdO,ZnO和SnO2薄膜,研究不同Dy掺杂浓度及热处理对3种薄膜性能的影响。XRD和SEM测试结果显示:适当的Dy掺杂和热处理可改善薄膜的结构特性,使薄膜表面的致密性变好。CdO,ZnO和SnO2薄膜的最佳掺Dy原子数分数为5%,5%和3%。掺Dy后Cd O,ZnO和SnO2薄膜的导电类型均为n型,电阻值降低约一个数量级。Dy掺杂使得薄膜的致密性增加而导致光透过率降低。制备的薄膜都是直接带隙半导体,相应的光学带隙:Cd O约2.232 eV,CdO∶Dy(Dy原子数分数5%)的略增为2.241 e V,ZnO薄膜约为3.31 eV;ZnO∶Dy(Dy原子数分数5%)约3.25 eV,SnO2薄膜约3.07 eV,SnO2∶Dy(Dy原子数分数3%)约3.03 eV。
The rare-earth Dy-doped CdO, ZnO and SnO2 films were prepared by thermal evaporation and heat treatment to study the effects of different doping concentration and heat treatment on the properties of three films. The results of XRD and SEM show that proper Dy doping and heat treatment can improve the structural properties of the films and make the surface of the films better. The optimal doping numbers of Dy atoms for CdO, ZnO and SnO2 thin films are 5%, 5% and 3%. After doping Dy, the conductivity types of Cd O, ZnO and SnO2 thin films are all n-type, and the resistance decreases about one order of magnitude. Dy doping makes the compactness of the film increased, leading to a decrease of light transmittance. The prepared films are all direct bandgap semiconductors. The corresponding optical bandgap is about 2.232 eV for CdO, 2.241 eV for CdO: Dy (5% Dy) and about 3.31 eV for ZnO: ZnO: Dy (Dy atomic fraction 5%) is about 3.25 eV, SnO2 thin film is about 3.07 eV, SnO2: Dy (Dy atomic fraction 3%) is about 3.03 eV.