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本文对非晶态Ni-Si-B合金薄膜的霍耳效应和磁阻随磁场变化等电磁性能进行了实验研究。在室温条件下,测量了非晶态Ni-Si-B合金薄膜的霍耳电势差,得出了该薄膜的霍耳系数和相应的每个原子的有效传导电子数Z≈0.3。结果表明,非晶态Ni-S-i-B合金薄膜具有正常的霍耳效应,可用自由电子模型的观点进行(?)述,本文还对非晶态Ni-Si-B合金薄膜的磁阻作了简要讨论。
In this paper, the Hall effect and reluctance of amorphous Ni-Si-B alloy films have been experimentally studied with the change of magnetic field and other electromagnetic properties. The Hall potential difference of amorphous Ni-Si-B alloy film was measured at room temperature. The Hall coefficient of the film and the number of effective conduction electrons per atom Z≈0.3 were obtained. The results show that the amorphous Ni-SiB alloy film has a normal Hall effect and can be described by the free electron model. The reluctance of the amorphous Ni-Si-B alloy thin film is also briefly discussed .