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日本 NTT 公司用 InGaAs 材料制成高速、低功耗双极晶体管。所开发的晶管是沉积 InP和 InGaAs 二种不同薄膜的异质结双极晶体管(HBT),与 GaAs 的 HBT 相比具有以下特性:电子传输特性好,只需一半驱动电压,驱动电流小,特性稳定以及小的驱动功率。NTT 公司首先制作顶部发射极为2μm×2μm的器件,在电流值15mA,室温下截止频率已达176GHz。另外,发射极的大小为1μm×2μm,采用微细化技术制作器件,驱动电流为2.3mA,截止频率为163GHz,电流值控制到0.6mA,可保持100GHz 的高速性能,其工作电流仅为早先制成器件的1/10～1/20,已能达到世界最高水平的工作速度,这种器件的增
Japan NTT company made of InGaAs materials, high-speed, low-power bipolar transistor. The developed transistor is a heterojunction bipolar transistor (HBT) deposited with two different thin films of InP and InGaAs. Compared with HBT of GaAs, the transistor has the following characteristics: the electron transport characteristic is good, only half of the driving voltage is needed, the driving current is small, Features stable and low drive power. NTT company first made the top of the emitter 2μm × 2μm device, the current value of 15mA, the cut-off frequency has reached 176GHz at room temperature. In addition, the emitter size of 1μm × 2μm, the use of miniaturization technology to produce devices, the drive current of 2.3mA, the cut-off frequency of 163GHz, the current value controlled to 0.6mA, 100GHz can maintain high-speed performance, the operating current only earlier system Into the device 1/10 ~ 1/20, has been able to reach the world’s highest level of work speed, the increase of this device