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我厂在进行某军工任务硅高速小功率晶体管的试制中,开始阶段制得的相当一部分晶体管,其输出特性曲线出现了两段饱和特性.其特点是,在低压较大电流区域,特性曲线密集、倾斜,在饱和区与工作区之间出现了一个准饱和区.伴随发生的另一现象是I_(CM)不能达到版图设计应达到的指标,h_(FE)随集电极电流I_C很快下降,在输出特性上表现
I plant in a military task of silicon high-speed low-power transistor trial, a considerable part of the initial stage of the transistor, the output characteristic curve appeared two sections of the saturation characteristics of its characteristics is that in the low voltage large current region, the characteristic curve-intensive , There is a quasi-saturation region between the saturation region and the work area.Another phenomenon that occurs is that I CM can not reach the target of layout design and h FE quickly decreases with the collector current I C , The output characteristics of the performance