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A 2.4-GHz SiGe HBT power amplifier(PA)with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology,BiCMOS5PAe.The bias circuit switches the quiescent current to make the PA operate in a high or low power mode.Under a single supply voltage of +3.5V,the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20dBm,respec-tively,with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode.The die size is only 1.32×1.37mm2.
A 2.4-GHz SiGe HBT power amplifier (PA) with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology, BiCMOS 5PAe. The bias circuit switches the quiescent current to make the PA operate in a high or low power mode.Under a single supply voltage of + 3.5V, the two-stage mode-switchable power amplifier provides PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20dBm, respec- tively with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode. The die size is only 1.32 × 1.37 mm2.