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介绍了两种测量半导体材料载流子双极迁移率的原理和方法。用载流子漂移实验方法测量了ｎ型Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２）材料在８０Ｋ时的双极迁移率，讨论了测量条件对双极迁移率的影响。
Two principles and methods of measuring the bipolar carrier mobility of semiconductor materials are introduced. The bipolar mobility of n-type Hg1-xCdxTe (x = 0.2) material at 80K was measured by carrier drift experiment. The influence of measurement conditions on bipolar mobility was also discussed.