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在激光器腔面处制作非吸收窗口(NAW)可以有效地减少光吸收,防止激光器过早出现光学灾变损伤(COD),是提高大功率半导体激光器的功率特性的重要手段之一。采用金属有机化学气相沉积(MOCVD)技术二次外延生长了大功率657 nm红光半导体激光器结构,通过闭管扩散Zn的方法在腔面附近制作了非吸收窗口。实验发现扩散温度550℃,扩散时间20 min时,得到的非吸收窗口最为有效,激光器连续工作的无扭折输出功率大于100 mW,超过常规的无窗口结构激光器的最大输出功率的两倍,激光器的斜率效率提高了23%。测量该类器件的温度特性发现,环境温度为20~70℃时,其输出功率均可大于50 mW,计算得到激光器的特征温度约为89 K,波长增加率约为0.24 nm/℃。
Making non-absorption window (NAW) at the laser cavity surface can effectively reduce the light absorption and prevent the premature occurrence of optical catastrophic damage (COD). It is an important means to improve the power characteristics of high power semiconductor lasers. The structure of high power 657 nm red semiconductor laser was epitaxially grown by metal organic chemical vapor deposition (MOCVD) technique. Non - absorption window was made in the vicinity of the cavity by closing diffusion of Zn. The experimental results show that the non-absorbing window is the most effective when the diffusion temperature is 550 ℃ and the diffusion time is 20 min. The kink-free output power of the laser working continuously is more than 100 mW, more than twice the maximum output power of the conventional windowless structure laser. The slope efficiency is improved by 23%. The temperature characteristics of these devices were measured. The output power of the devices can be more than 50 mW at ambient temperature of 20-70 ℃. The calculated characteristic temperature of the laser is about 89 K and the wavelength increase rate is about 0.24 nm / ℃.