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利用倒置相差显微镜观察了用于蓝紫光倍频的硫氰酸汞镉晶体 (CdHg(SCN) 4 )在 3%的KCl溶液中的生长形貌 :在 (10 0 )面上呈现为生长直线台阶列 ,在锥面上呈现生长丘。在溶液循环流动的情况下测量了晶体的生长速率 ,发现晶体在过饱和度低于 2 .5%时不生长。计算了晶体不同面的界面相变熵因子。通过三者综合分析得到晶体为多二维成核生长机制。
The morphology of CdHg (SCN) 4 crystals grown in 3% KCl solution was observed by inverted phase-contrast microscope. The morphology of CdHg (SCN) 4 crystals grown on the (10 0) Column, showing the growing mound on the cone. The growth rate of the crystals was measured with the solution circulating and found that the crystals did not grow when the supersaturation was below 2.5%. The phase transition entropy factor of different crystal surfaces was calculated. Through the comprehensive analysis of the three obtained crystal two-dimensional nucleation and growth mechanism.