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建立了双极晶体管(BJT)在强电磁脉冲作用下的二维电热模型,对处于有源放大区的BJT在基极注入强电磁脉冲时的瞬态响应进行了仿真.结果表明,BJT烧毁点位置随注入脉冲幅度变化而变化,低脉冲幅度下晶体管烧毁是由发射结反向雪崩击穿所致,烧毁点位于发射结柱面区;而在高脉冲幅度下,由基区-外延层-衬底组成的p-n-n+二极管发生二次击穿导致靠近发射极一侧的基极边缘率先烧毁;BJT的烧毁时间随脉冲幅度升高而减小,而损伤能量则随之呈现减小-增大-减小的变化趋势,因而存在一个极小值和一个极大值.仿真与实验结果的比较表明,本文建立的晶体管模型不但能预测强电磁脉冲作用下BJT内部烧毁发生的位置,而且能够得到损伤能量.
A two-dimensional electrothermal model of bipolar transistor (BJT) under strong electromagnetic pulse was established, and the transient response of BJT in active amplification region to strong electromagnetic pulse was simulated. The results show that BJT burnout point The location changes with the pulse amplitude of the implanted pulse. The transistor is burned down by the reverse avalanche breakdown of the emitter junction at the low pulse amplitude, and the burnout point is located at the emitter junction and cylinder region. At the high pulse amplitude, The second breakdown of the pn-n + diode with the substrate led to the first burn-down of the base edge close to the emitter side. The burn-down time of BJT decreased with increasing pulse amplitude and the damage energy decreased accordingly Large-decrease trend, so there is a minimum value and a maximum value.Comparison of simulation and experimental results show that the transistor model established in this paper can not only predict the location of BJT internal burnout under the strong electromagnetic pulse, but also can Get damage energy.