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由于MOS集成电路有高集成度、低功耗和快速的特点,近年来有越来越多的计算机用MOS RAM作主存储器。目前的生产水平已达到每个芯片有4Kb存储单元和200毫微秒的存取周期。然而这种MOS RAM还不能满足计算机的要求,特别是在集成度上。要提高集成度,除改进工艺外就需要缩小存储单元的面积。所以在存储方案上,MOS RAM有一个向单管单元发展的趋势。制作单管存储单元RAM的困难在于存储信号经过存储点电容与读出线电容间重新分布电荷后,使信号变得非常小。因此,要求有一个非常灵敏的读出放大器才能检测出存储的信号。对于一个给定的读出线长(即每根位读出线
In recent years, more and more computers have used MOS RAM as the main memory because of their high integration, low power consumption and fast characteristics. Current production levels have reached 4Kb memory cells per chip and 200 nanosecond access cycles. However, this kind of MOS RAM can not meet the requirements of the computer, especially in terms of integration. To improve the level of integration, the area of the memory cell needs to be reduced in addition to improving the process. Therefore, in the storage scheme, MOS RAM has a tendency toward a single-tube unit. The difficulty with making a single-pipe memory cell RAM is that the signal becomes very small after the stored signal redistributes charge across the storage point capacitance and sense line capacitance. Therefore, a very sensitive sense amplifier is required to detect the stored signal. For a given readout line length (that is, for each bit readout line