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1 引言使用功率半导体器件通常要求器件与散热器或设备的底盘之间有电气隔离。原因有三点:a)安全性;b)通过减小结点对地的分布电容来减小电磁兼容;c)在同一个散热器上要安装许多器件。这将导致增加热电阻,安装复杂,困难的绝缘电压测试以满足各国不同的安全标准。一般的做法是将绝缘材料放置在半导体器件与散热器之间,但是这会增加器件到散热器的热阻R_((th)cs)。现在IXYS发明了一种新的内部绝缘的TO-247封装的功率半导体器件。下面介绍的这种新的UL认可的ISOPLUS247~(TM)封装不仅有2500V(有效值)的绝缘电压,而且与传统的绝缘器件相比具有更低的结到散热器热阻,更低的结到器件的分布电容和更好的能量流动。
1 Introduction The use of power semiconductor devices usually requires electrical isolation between the device and the chassis of a heat sink or device. There are three reasons for this: a) safety; b) minimization of electromagnetic compatibility by reducing the distributed capacitance of the node to ground; and c) many devices to be mounted on the same heat sink. This will lead to the addition of thermal resistance, installation of complex, difficult insulation voltage tests to meet different national safety standards. It is common practice to place the insulating material between the semiconductor device and the heat sink, but this increases the thermal resistance R _ ((th) cs) of the device to the heat sink. IXYS has now invented a new, internally-insulated TO-247 packaged power semiconductor device. The new UL Recognized ISOPLUS247 ™ package described below not only has an insulation voltage of 2500V (rms) but also has lower junction-to-heatsink thermal resistance and a lower junction than conventional insulation devices Distribution capacitance to the device and better energy flow.