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飞兆半导体公司(Fairchild Semiconductor)推出采用SO-8封装的80伏N沟道MOSFET器件FDS3572,其具备综合性能优势,能同时为DC/DC转换器的初级和次级同步整流开关电源设计提供优异的整体系统效率。FDS3572提供7. 5 nC Miller电荷(Qgd),比相同RDS(on)级别的产品低38%。该器件的低Miller
Fairchild Semiconductor Introduces the 80-V N-Channel MOSFET Device FDS3572 in SO-8 with Integrated Performance Advantage to Deliver Superior Design for Both Primary and Secondary Synchronous Rectifier Switching Power Supplies for DC / DC Converters The overall system efficiency. The FDS3572 delivers 7.5 nC Miller charge (Qgd), 38% less than the same RDS (on) grade. The device’s low Miller