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ZnSe is a sereiconductor with a wide direct energy gap(2.7 eV)at room temperature and is suitable for blue light emitting diodes, lasers and other opto electronic devices. GaAs has been mainly used as a substrate of ZnSe. However. there exists a 0.27％lattice ismatch between them. This mismateh causes the generation of many dislocations and defects, and as a result the quality of ZnSe layers becomes poor. In_xGa_(1-x)As can be adjusted its lattice con