论文部分内容阅读
p-Si薄膜在氢氟酸溶液中的电化学抛光是通过阳极溶解降低薄膜表面粗糙度。本文用线性扫描研究了在不同的氢氟酸浓度下的电化学行为,发现随氢氟酸溶液浓度的增加阳极溶解速率也随之增加。当氢氟酸浓度为4%及6%时,可得到平整的表面。电化学抛光技术为制备光亮硅面提供了一种简单可行的方法。
Electrochemical polishing of p-Si thin films in hydrofluoric acid solution reduces the film surface roughness by anodic dissolution. In this paper, the electrochemical behavior of hydrofluoric acid at different concentrations of hydrofluoric acid was studied by linear scanning. It was found that the anodic dissolution rate increased with the concentration of hydrofluoric acid solution. When hydrofluoric acid concentrations are 4% and 6%, a flat surface is obtained. Electrochemical polishing technology for the preparation of bright silicon surface provides a simple and feasible method.