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采用锗(Ge)浓缩技术对绝缘层上锗硅(SGOI)材料进行循环氧化、退火,制备出19nm厚的绝缘层上锗(GOI)材料。然后对该GOI材料在400℃下进行O_3氧化,以进一步减薄GOI的厚度。采用高分辨透射电镜(HRTEM)、X射线反射(XRR)和原子力显微镜(AFM)等对样品形貌和结构进行表征。测试结果显示,O_3氧化减薄后的GOI晶体质量得到提高,且表面更加平整(厚度减薄2.5nm,粗糙度RMS降低0.26nm)。通过循环的O_3氧化减薄,可获得高质量的超薄(小于10nm)GOI材料,用于制备超薄高迁移率沟道Ge MOSFET。
The germanium (Ge) concentration technique was used to cyclically oxidize and anneal the germanium-silicon-germanium (SGOI) material on the insulating layer to prepare a 19-nm-thick germanium-on-insulator (GOI) material. The GOI material was then O 3 oxidized at 400 ° C to further reduce the thickness of the GOI. The morphology and structure of the samples were characterized by high resolution transmission electron microscopy (HRTEM), X-ray reflection (XRR) and atomic force microscopy (AFM). The test results show that the quality of the GOI crystal after O_3 oxidation thinning is improved and the surface is smoother (the thickness is reduced by 2.5nm and the roughness RMS is reduced by 0.26nm). High-quality ultra-thin (less than 10nm) GOI materials are obtained by cyclic O_3 oxidation reduction for the fabrication of ultra-thin, high-mobility channel Ge MOSFETs.