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本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析.pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题.SiC/SiO2界面上界面态的存在也会使提取出的数值与实际数值产生偏差.本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响,然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试,提取出了沟道掺杂浓度.在测试中,采用不同的扫描速率,分析了界面态对提取结果的影响.理论分析结果和实验测试结果相一致.
In this paper, the theoretical and experimental analysis of the method of extracting carrier concentration of channel MOSFET in buried tunnel by CV method is carried out theoretically and experimentally.The distortion of CV curve of buried MOS structure caused by the existence of Pn junction is the channel carrier concentration Extraction brings some problems.The presence of interface state on the SiC / SiO2 interface will also make the extracted value deviate from the actual value.This paper firstly theoretically analyzed the channel depth and interface state of channel carrier concentration extraction Then the CV curves of two channel buried MOS structures were tested and the channel doping concentration was extracted.Using different scan rates, the effects of interface states on the extraction results were analyzed The theoretical analysis results are consistent with the experimental test results.