Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 ? ·μm to sub 200 ? ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods. Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of ​​modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. providing a new process method which reduces the contact resistance from 597 · μm to sub 200 · · μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.