通过射频反应磁控溅射方法在玻璃衬底上制备N掺杂的Cu2O薄膜,采用X射线衍射、分光光度计、X射线光电子能谱和霍尔效应等检测,研究了氮气掺杂对Cu2O薄膜性能的影响。结果表明:随着N原子的掺入,薄膜的结晶质量下降,光学带隙从2.28 eV升至2.47 eV左右,同时薄膜的电学性能趋于稳定。当N2/O2流量比率为0.6时,薄膜电阻率为1.5Ω.cm,空穴浓度为2.16×1019cm-3,霍尔迁移率为0.5 cm2.V-1.s-1。 N-doped Cu2O thin films were prepared on glass substrates by RF reactive magnetron sputtering. The effects of nitrogen doping on Cu2O films were investigated by X-ray diffraction, spectrophotometer, X-ray photoelectron spectroscopy and Hall effect. The impact of performance. The results show that with the addition of N atoms, the crystalline quality of the films decreases and the optical band gap increases from 2.28 eV to 2.47 eV. Meanwhile, the electrical properties of the films tend to be stable. The film resistivity was 1.5 Ω · cm, the hole concentration was 2.16 × 10 19 cm -3, and the Hall mobility was 0.5 cm 2 V-1.s-1 when the flow rate of N 2 / O 2 was 0.6.