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掺等电子杂质铟生长了低位错密度的半绝缘砷化镓晶体.晶体中位错腐蚀坑密度达到约10~2/cm~2数量.晶体中没有观察到铟的微沉淀物.
Indium-doped electronic impurities indium growth of low dislocation density of semi-insulating gallium arsenide crystals in the crystal dislocation corrosion pit density of about 10 ~ 2 / cm ~ 2. No indium precipitates observed in the crystal.