整流器很容易影响低压电源的性能。例如,硅二极管,其导通压降是0.7V。若采用图1所示的MOSFET整流电路可以避免由于二极管整流器所产生的功耗和热负荷。该方案特别适合于缺乏散热条件的真空工作环境。图1中的变压器次为MOSFET管Q_1和Q_2两端提供极性为正的电压V_(DS);该电压在每个 Rectifier can easily affect the performance of low-voltage power supply. For example, silicon diodes, the turn-on voltage drop is 0.7V. Using the MOSFET rectifier shown in Figure 1 avoids the power consumption and thermal load caused by the diode rectifier. The program is particularly suitable for the lack of cooling conditions of the vacuum work environment. The transformer sub-stage in Figure 1 provides a positive voltage V_ (DS) at both ends of the MOSFETs Q_1 and Q_2. The voltage is between