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利用单束800nm飞秒激光在掺杂了Al的ZnO薄膜中制备了纳米周期条纹结构。研究了不同能流密度的飞秒激光在照射不同的时间后,表面纳米周期结构的变化规律及其形成机制。利用He-Ge激光器作为激发光源,研究了ZnO:Al薄膜的光致发光特性及其与纳米周期结构的关系。结果表明,近带隙发光增强的主要原因是800nm飞秒激光在诱导纳米周期结构的同时对ZnO:Al薄膜的淬火作用和周期纳米条纹对He-Ge激光的吸收增加。
A single 800nm femtosecond laser was used to fabricate nanostructured periodic stripe structures in Al-doped ZnO thin films. The variation regularity and formation mechanism of the periodic nanostructural structure of the femtosecond laser with different fluence were studied at different irradiation time. The photoluminescence characteristics of ZnO: Al thin films and their relationship with the periodic structure of nanowires were studied by using He-Ge laser as excitation light source. The results show that the enhancement of near-bandgap luminescence is mainly due to the quenching of ZnO: Al thin film and the increase of the absorption of He-Ge laser by the periodic nano-stripe while the 800nm femtosecond laser induces the nano-periodic structure.