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一、前言 Si外延方法是很多的,但如何实现低温外延仍然是当前尚待解决的问题之一。最近发展起来的离子束外延是解决该问题的一种途径。部分离化束外延是一种形式的离子束外延,其特点是具有一定数量和能量的离子参与了薄膜的外延过程。引入离子的目的是为了使外延材料的质点通过电场的加速而被赋与远高于热动能的附加能量,并且因为材料质点以离子形式存在,其化学活性也会相应地大大提高,从而能有效地影响薄膜的淀积过程,其结果就是降低了薄膜外延生长的温度。
I. INTRODUCTION There are many Si epitaxial methods, but how to realize the low-temperature epitaxy is still one of the problems to be solved so far. The recent development of ion beam epitaxy is a way to solve this problem. Partially ionized beam epitaxy is a form of ion beam epitaxy characterized by a certain amount and energy of ions participating in the epitaxial process of the film. The purpose of introducing ions is to make the mass of the epitaxial material be given an additional energy much higher than the thermal energy by the acceleration of the electric field and the chemical activity of the material particles will be greatly increased because of the ionic form so as to be effective Affect the film deposition process, the result is to reduce the film epitaxial growth temperature.