Bi2Te3 thin films and GeTe/B2Te3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573K for 30min.Thermoelectric (TE) measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi2 Te3 thin films and GeTe/B2Te3 superlattices,respectively.High TE performances with figure-of-merit (ZT) values as high as 1.32 and 1.56 are achieved at 443K for 30hm and 50hm Bi2 Te3 thin films,respectively.These ZT values are higher than those of p-type Bi2 Tea alloys as reported.Relatively high ZT of the GeTe/B2 Te3 superlattices at 300-380K were 0.62-0.76.The achieved high ZT value may be attributed to the unique nano-and microstructures of the films,which increase phonon scattering and reduce thermal conductivity.The results indicate that Bi2 Te3-based thin films can serve as high-performance materials for applications in TE devices.