This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology.No hump effect in the subthreshold region is observed after irradiation,which is considered to be due to the thin STI corner oxide thickness.A negative substrate bias could effectively suppress the STI leakage,but it also impairs the device characteristics.The three-dimensional simulation is introduced to understand the impact of substrate bias.Moreover,we propose a simple method for extracting the best substrate bias value,which not only eliminates the STI leakage but also has the least impact on the device characteristics. This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also the least impact on the device characteristics.