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通过对体效应二极管在毫米波高端工作特点的分析,详细讨论了6毫米GaAs体效应管的设计原则.着重探讨了器件设计中热参数与微波寄生参数要求间的矛盾,推导得到一组计算公式用以确定器件管芯与封装的设计参数.介绍了采用GaAs/AsCl_3/H_2汽相n~#外延、无氰无铵电镀金热沉、双金带十字引线等措施的器件制备工艺.研制的二极管在V波段的最大输出功率达130mW,最高效率为3.8%;以谐波方式在94GHz下输出大于10mW.本文还重点报道了器件可靠性研究的情况,器件预期的室温平均工作寿命超过1.4×10~8小时.使用该器件的振荡器已成功地用于常温50°K低噪声参放及微波遥感等方面.
Through the analysis of the operating characteristics of the body-effect diode at the high-end of the millimeter-wave, the design principle of the 6-millimeter GaAs body-effect transistor is discussed in detail.The contradiction between thermal parameters and the requirements of microwave parasitic parameters in the device design is discussed emphatically, Which is used to determine the design parameters of the device die and the package.The device fabrication process using GaAs / AsCl 3 / H 2 vapor phase n ~ # epitaxy, cyanide-free ammonium-free gold plating heat sink, double gold ribbon cross leads and other measures are introduced. The maximum output power of the diode in the V-band is 130mW, the maximum efficiency is 3.8%, and the output of the diode is greater than 10mW at 94GHz in harmonic mode.This article also focuses on the research of device reliability, and the expected average working life of the device is over 1.4 × 10 ~ 8 hours. Oscillators using this device have been successfully used for low temperature noise at 50 ° K and microwave remote sensing.