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为了使垂直腔面发射激光器(VCSEL)实现大功率、高效率的激光输出,对p型分布布喇格反射镜(DBR)形成的同型异质结在界面处存在大势垒导致的高串联电阻和严重发热现象进行了研究。为降低串联电阻,实现VCSEL在室温下的大功率连续发射,分析了p型DBR异质结的势垒结构,对突变异质结的串联电阻进行了计算分析,提出降低势垒高度以及增加扩散浓度是减小串联电阻的主要途径,而漏斗状的掺杂能有效降低体电阻;通过对梯度渐变异质结的分析得出缓变结能有效降低势垒高度;而用Matlab对能带图的数值分析表明,Al0.1Ga0.9As/AlAs接触层中Al组分采取双曲线形式的渐变也能有效降低势垒高度,即降低串联电阻;此外,对于渐变区缓变结的比较表明,采用20～25nm的渐变区宽度即可以得到比较低的势垒高度,同时也不会对DBR的反射率有太大的影响,是较合适的选择。
In order to realize a high power and high efficiency laser output from a vertical cavity surface emitting laser (VCSEL), a high series resistance due to a large potential barrier exists at the interface of a heterojunction formed with a p-type distributed Bragg reflector (DBR) and Severe fever phenomenon was studied. In order to reduce series resistance and achieve high power continuous emission of VCSEL at room temperature, the barrier structure of p-type DBR heterojunction was analyzed, the series resistance of the heterojunction was calculated and analyzed, and the potential barrier height and diffusion Concentration is the main way to reduce the series resistance, while the funnel-shaped doping can effectively reduce the body resistance. Through the analysis of the gradient graded heterojunction, it can be concluded that the slow-change junction can effectively reduce the barrier height. The numerical analysis shows that the Al composition in the Al0.1Ga0.9As / AlAs contact layer adopts a hyperbolic gradual change to reduce the barrier height effectively, that is, to reduce the series resistance. In addition, the comparison of the gradual change junction in the graded region shows that using 20 ~ 25nm width of the gradient area can be relatively low barrier height, but also does not have a significant impact on the reflectivity of DBR, is a more appropriate choice.