提出一种新型高阻硅(电阻率ρ>8kΩ.cm)衬底MOS(metal-oxide-semiconductor)结构的凸起式共面波导。给出了其在50MHz～40GHz频段的插入损耗和回波损耗测试结果,以及在-40V～+40V直流偏压下散射参数的变化。结果表明,随着偏压的变化,回波损耗在Ka波段极值点的频率和幅值均会产生偏移,插入损耗极值点的频率基本没有偏移,只存在幅值偏移。共面波导的损耗偏移与MOS结构的Si-SiO2界面效应有关,在凸起式共面波导损耗的偏压实验中,观察到与传统MOS结构共面波导相反的曲线,并尝试给出了理论解释。该文设计的共面波导在35GHz下实现了小于-0.010dB/mm的损耗,优于Ka频段硅衬底共面波导已报道的结果。 A new type of convex coplanar waveguide with high resistance silicon (resistivity ρ> 8kΩ.cm) substrate MOS (metal-oxide-semiconductor) structure is proposed. The results of the insertion loss and return loss measurements in the 50MHz ~ 40GHz frequency band and the variation of the scattering parameters under the bias voltage of -40V ~ + 40V are given. The results show that the frequency and amplitude of the return loss at the extreme point of Ka band will be offset with the variation of bias voltage, and the frequency at the extreme point of insertion loss has almost no offset but only amplitude offset. The loss of coplanar waveguide is related to the Si-SiO2 interfacial effect of MOS structure. In the biased experiment of convex coplanar waveguide loss, the opposite curve of the coplanar waveguide of traditional MOS structure is observed, Theoretical explanation. The coplanar waveguide designed in this paper achieves less than -0.010dB / mm loss at 35GHz, which is better than the reported result of the Ka-band silicon substrate coplanar waveguide.