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高亮度硅量子点是实现硅光电子集成的关键部件,针对利用硅原子的自组织生长方法制备的硅量子点具有浓度低、发光弱等缺点,研究了利用硝酸氧化和氢氟酸腐蚀制备量产的硅量子点的方法,增加了硅量子点的浓度,从而提高了硅量子点的发光强度。首先,通过改变硝酸和氢氟酸的浓度和反应时间,获得不同尺寸的硅量子点和过滤前后硅量子点溶液的发光峰位。其次,通过分析可知,化学腐蚀法制备的硅量子点浓度远远高于硅原子自组织生长方法制备的量子点浓度,大大地提高其光致发光强度。最后,将硅量子点加入溶胶-凝胶法制备的Si O2中,经过不同的退火温度,得到的硅量子点的发光峰位和强度不同。
High-brightness silicon quantum dots are the key components for the integration of silicon optoelectronics. The silicon quantum dots prepared by the self-organized growth method using silicon atoms have the disadvantages of low concentration and weak light emission. The production of mass production by nitric acid oxidation and hydrofluoric acid etching The method of silicon quantum dots increases the concentration of silicon quantum dots, thereby increasing the luminescence intensity of silicon quantum dots. First of all, by changing the concentration of nitric acid and hydrofluoric acid and reaction time, different sizes of silicon quantum dots and silicon quantum dots before and after the solution of the fluorescence peak. Secondly, the analysis shows that the concentration of silicon quantum dots prepared by chemical etching is much higher than that prepared by silicon atom self-organized growth method, which greatly enhances the photoluminescence intensity. Finally, the silicon quantum dots are added to the Si O2 prepared by the sol-gel method, and after different annealing temperatures, the obtained silicon quantum dots have different emission peak positions and intensities.