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Deep submicron partially depleted silicon on insulator(PDSOI) MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect(SHE) has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.
Because the self-heating effect (SHE) has a great influence on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction.