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研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型.采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性.在研究模型中考虑了Si衬底中反型层的量子化和多晶硅栅耗尽,还研究了多晶硅掺杂对栅氧化层隧穿电流的影响.仿真结果表明,栅氧化层隧穿电流随多晶硅栅掺杂浓度的增加而增加.该结论与已报道的结果相吻合,从而证明了该模型的正确性.“,”An analytical model was developed for the direct tunneling current density through an ultrathin gate oxide in a metal-oxide-semiconductor field-effect transistor (MOSFET). The tunneling probability was calculated using Wentzel-Kramers-Brilliouin (WKB) approximation. The explicit surface potential equations were used in the model to improve its accuracy. Both inversion layer quantization in the silicon substrate and poly silicon depletion in the gate were included in the developed overall model. The effect of poly silicon doping on the gate oxide tunneling currents was also studied. Simulation results show that the gate oxide tunneling current density increases with the increase of the doping in poly silicon gate. The results obtained match closely with the established results reported in the literature, thus proving the validity of the model.