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从金属-半导体-绝缘体-金属（MSIM）层的非线性效应和慢极化效应分析了不能用正弦讯号的频域方法来研究其动态性质的原因．对于这种结构，用时域介电谱方法能更可靠地分出MOS结构的接触层和绝缘层中空间电荷运动的许多重要信息．
The reason why the dynamic properties can not be studied by using the frequency domain method of sinusoidal signal is analyzed from the nonlinear effect and slow polarization effect of metal - semiconductor - insulator - metal (MSIM) layer. With this structure, many important pieces of information on the movement of the space charge in the contact layer and the insulating layer of the MOS structure can be more reliably separated by the time-domain dielectric spectroscopy method.