【摘 要】
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Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94.The physical properties of the Ge-Ga-S f
【机 构】
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Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials a
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Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94.The physical properties of the Ge-Ga-S films,including optical band gap,refractive index,and thickness,vary with the time of heat treatment.Based on the analysis of the topology model,it is concluded that the Ge-Ga-S thin films with components close to the stoichiometric ratio can form the most Ga-S bonds and Ga-S bonds,and the physical properties of the Ge27.3Ga6.3S66.3 (MCN =2.62) film are the most stable.This is an important reference for thin film photonic devices.
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