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Carbon nitride films have been synthesized in a wide range of biases from 0 to -900 V by vacuum cathodic arc method. The N content was about 12.0-22.0 at. pct. Upon increasing the biases from 0 to -100 V, the N content increased from 15.0 to 22.0 at. pct which could be attributed to the knot-on effect. While the further increasing biases led to the gradual falling of the N content to 12.0 at. pct at -900 V due to the enhancement of the sputtering effect. Below -200 V, with the increasing biases the sp2C fraction in the films decreased, as a result of vvhich the I(D)/I(G) fell in the Raman spectra and the sp peaks also showed the decreasing tendency relative to the s peaks in the VBXPS (valence band X-ray photoelectron spectroscopy). While above -200 V, the sp2C fraction increased and the films became graphitinized gradually, accompanying which the I(D)/I(G) rose from -200 V to -300 V and the Raman spectra even shovved the graphite characteristic above -300 V and the sp peaks rose again relative to the s
Carbon nitride films have been synthesized in a wide range of biases from 0 to -900 V by vacuum cathodic arc method. The N content was about 12.0-22.0 at. Pct. Upon increasing the biases from 0 to -100 V, the N content increased from 15.0 to 22.0 at. pct which could be attributed to the knot-on effect. While the further increasing biases led to the gradual falling of the N content to 12.0 at. pct at -900 V due to the enhancement of the sputtering effect . Below -200 V, with increasing increasing biases the sp2C fraction in the films decreased, as a result of vvhich the I (D) / I (G) fell in the Raman spectra and the sp peaks also showed the decreasing tendency relative to the While above -200 V, the sp2C fraction increased and the resulting became graphitized gradually, accompanying which the I (D) / I (G) rose from -200 V to -300 V and the Raman spectra even shovved the graphite characteristic above -300 V and the sp peaks rose again relative to the s