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采用聚硅氮烷前驱体在高温常压下热裂解的方法制备了3C-SiC纳米棒,在室温下观察到来自纳米棒的378nm(3.3eV)强紫外发射.利用扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜和X射线衍射对样品的形貌和结构进行表征,观察到在该结构中存在类似6H-SiC结构的三层堆垛层错.利用室温荧光光谱和室温荧光衰减曲线研究了强紫外发射的产生机理,紫外发射来源于3C-SiC纳米棒中的三层堆垛层错的发光.
3C-SiC nanorods were prepared by thermal cracking of polysilazane precursors at high temperature and pressure, and 378nm (3.3eV) strong UV emission from nanorods was observed at room temperature.Using scanning electron microscopy, transmission electron microscopy , High-resolution transmission electron microscopy (TEM) and X-ray diffraction (XRD), the three-layer stacking faults with similar 6H-SiC structure were observed.Using room temperature fluorescence spectroscopy and fluorescence decay curve at room temperature The mechanism of the strong UV emission is based on the fact that UV emission originates from the luminescence of three-layer stacking fault in 3C-SiC nanorods.