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本文对离子注入搀杂杂质分布的热再分布过程提出了两种分析手段。其一是已知热再分布的具体过程,通过求解扩散方程得到了杂质最终分布的解析解;其二是已知热再分布最终杂质分布的某个边界条件,本文提出了有效杂质总量守恒模型,并采用牛顿-拉夫逊,或蒙特卡罗计算机数值方法,可求得最终的杂质分布。文中最后给出了CMOS工艺中离子注入P阱的计算结果。
In this paper, two analytical methods are proposed for the thermal redistribution process of ion implantation doping impurity distribution. The first one is the specific process of known thermal redistribution, and the analytical solution of the final distribution of impurities is obtained by solving the diffusion equation. The second is a certain boundary condition of the final impurity distribution of known thermal redistribution. In this paper, Model, and using Newton-Raphson, or Monte Carlo computer numerical methods, can be obtained by the final impurity distribution. Finally, the calculation results of ion implantation P-well in CMOS process are given.