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设计了一种基于场效应晶体管的量子点场效应单光子探测器(quantum dot field effect transistor,QDFET),建立了二维电子气(two-dimensional electron gas,2DEG)的薛定谔方程和泊松方程,通过对薛定谔方程和泊松方程的自洽求解,对2DEG的载流子浓度进行了模拟。模拟结果显示,AlGaAs的Al组分、δ掺杂层的掺杂浓度以及隔离层的厚度对于2DEG的载流子浓度均有影响。为了使2DEG具有较高的载流子浓度,AlGaAs的Al组分应为0.2~0.4,δ掺杂浓度应为6~8×10~(13)/cm~2,隔离层厚度应在50nm以下。通过对2DEG的载流子浓度进行研究,可以掌握2DEG载流子浓度的影响因素,从而通过优化QDFET结构,可提高2DEG的载流子浓度。这对于高灵敏度QDFET的制备具有重要的意义和应用价值。
A quantum dot field effect transistor (QDFET) based on field-effect transistor (FET) was designed and a Schrödinger equation and a Poisson equation for two-dimensional electron gas (2DEG) Solving the Schrödinger equation and the Poisson equation, the carrier concentration of 2DEG was simulated. The simulation results show that the Al concentration of AlGaAs, the doping concentration of δ-doped layer and the thickness of the isolation layer all have an influence on the carrier concentration of 2DEG. In order to make 2DEG have higher carrier concentration, AlGaAs Al composition should be 0.2 ~ 0.4, δ doping concentration should be 6 ~ 8 × 10 ~ (13) / cm ~ 2, the isolation layer thickness should be below 50nm . By studying the carrier concentration of 2DEG, the influence factors of 2DEG carrier concentration can be grasped, so that the carrier concentration of 2DEG can be increased by optimizing the QDFET structure. This is of great significance and application value for the preparation of high-sensitivity QDFETs.