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以Zn∶Zr为靶材,利用直流反应磁控溅射法制备了ZnO∶Zr透明导电薄薄膜。研究了沉积压强对ZnO∶Zr薄膜形貌、结构、光学及电学性能的影响。实验结果表明所制备的ZnO∶Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。沉积压强对ZnO∶Zr薄膜的晶化程度、形貌、生长速率和电阻率影响很大,而对其光学性能如透光率、光学带隙及折射率影响不大。当沉积压强为2 Pa时,ZnO∶Zr薄膜的电阻率达到最小值2.0×10-3Ω·cm,其可见光平均透过率和平均折射率分别为83.2%和1.97。
ZnO: Zr thin films were prepared by direct current reactive magnetron sputtering with Zn:Zr as target. The effect of deposition pressure on the morphology, structure, optical and electrical properties of ZnO: Zr thin films was investigated. The experimental results show that ZnO: Zr is a polycrystalline thin film with hexagonal wurtzite structure and has a preferred c-axis orientation perpendicular to the substrate. The deposition pressure has a great influence on the crystallization degree, morphology, growth rate and resistivity of ZnO: Zr films, but has little effect on the optical properties such as transmittance, optical band gap and refractive index. When the deposition pressure is 2 Pa, the resistivity of ZnO: Zr film reaches the minimum value of 2.0 × 10-3Ω · cm, and its average visible light transmittance and average refractive index are 83.2% and 1.97, respectively.