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从热力学角度研究了Mo-Si-C三元系中所有二元化合物化合反应的吉布斯自由能随温度变化的规律,探索了SiC/MoSi2复合材料原位反应热压烧结的最佳工艺参数。结果表明,利用Mo、Si、C混合粉末原位反应合成SiC/MoSi2复合材料在热力学上是完全可行的,反应烧结温度低于1728K(1455℃)是为抑制Mo2C形成,保证SiC生成的热力学条件。采用原位反应热压烧结工艺能够制备具有优异显微组织的SiC/MoSi2复合材料。
The Gibbs free energies of all the binary compounds in Mo-Si-C ternary system were studied from the thermodynamic point of view, and the optimum technological parameters of in-situ hot pressing sintering of SiC / MoSi2 composites were explored. . The results show that the synthesis of SiC / MoSi2 composites by in-situ reaction of Mo, Si and C powders is completely feasible in thermodynamics. The reaction sintering temperature below 1728K (1455 ℃) is to suppress the formation of Mo2C and ensure the thermodynamic conditions of SiC formation . The SiC / MoSi2 composites with excellent microstructure can be prepared by in situ reactive hot pressing sintering.