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研究了一种改善射频功放记忆效应的方法并对所设计的低记忆功放进行了行为级建模。设计了10W峰值功率的射频功放,通过加载漏级低阻抗终端并结合最佳电流偏置的方法来减少功放的记忆效应。在建模过程中应用了Cao方法估计功放的记忆长度并进行了验证。基于上述技术,文中所设计的低记忆射频功放能够用简单模型精确描述。实验结果表明,对设计的低记忆功放,采用仅包含7个复系数的Hammerstein模型就可以得到-48.5dB的归一化均方误差(NMSE)指标。
A method to improve the memory effect of radio frequency power amplifier is studied and the behavioral modeling of the designed low memory amplifier is carried out. The RF power amplifier with 10W peak power is designed to reduce the memory effect of the amplifier by loading a low-leakage terminal and combining the best current bias. In the modeling process, Cao method was applied to estimate the memory length of the amplifier and verified. Based on the above techniques, the low-memory RF power amplifier designed in this paper can be accurately described by a simple model. Experimental results show that for a low memory amplifier designed, a normalized mean square error (NMSE) of -48.5dB can be obtained using a Hammerstein model containing only seven complex coefficients.